Sulfur doping in multivacancy graphene systems

被引:5
作者
Mombru, Dominique [1 ]
Faccio, Ricardo [1 ]
Mombru, Alvaro W. [1 ]
机构
[1] Univ Republica, Fac Quim, Cryssmat Lab, Ctr NanoMat,DETEMA, Montevideo, Uruguay
关键词
Graphene; DFT; Vacancies; Sulfur; INITIO MOLECULAR-DYNAMICS; WALLED CARBON NANOTUBES; AUGMENTED-WAVE METHOD; TRANSITION; METALS;
D O I
10.1016/j.apsusc.2018.07.218
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The conformational, magnetic and electronic study of one and two sulfur atoms doping on multivacancy graphene systems, using first principles calculations is presented. The location for the addition of the sulfur atoms is ruled by the presence of pentagonal figures in the optimized multivacancy graphene system or, in case of the absence of such figures, by the concave four membered structures in the vacancy. The electronic structure and the magnetism in these systems are strongly affected by the cancellation of dangling bonds due to the inclusion of sulfur atoms. Finally, it was possible to demonstrate that the inclusion of one and even a second sulfur atoms in the multivacancy graphene systems is favorable.
引用
收藏
页码:336 / 344
页数:9
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