rf oxygen plasma assisted molecular beam epitaxy growth of BiFeO3 thin films on SrTiO3 (001)

被引：24
|
作者：
Kabelac, J. [1 ]
Ghosh, S.
Dobal, P.
Katiyar, R.
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 03期
关键词：
D O I：
10.1116/1.2715992
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
BiFeO3 (BFO) thin films were grown epitaxially by rf oxygen plasma assisted molecular beam epitaxy on SrTiO3 (001) substrates with and without SrRuO3 (SRO) thin film electrodes. BFO thin films show excellent crystalline quality and x-ray diffraction studies show the presence of only one phase. Polarized Raman spectroscopy also confirmed high crystalline quality of the films. BFO thin films show presence of ferroelectricity on conducting Nb:STO substrates and SRO-STO. Films on Nb:STO have leakage currents similar to 0.1 mu A/cm(2) and remnant polarization similar to 28 mu C/cm(2). Films on SRO-STO have leakage currents similar to 8 nA/cm(2) and remnant polarization similar to 56 mu C/cm(2). Nb diffusion and poor surface quality of Nb:STO can be attributed to the difference in ferroelectric and leakage properties of the BFO thin films grown on Nb:STO and SRO-STO. (c) 2007 American Vacuum Society.
引用
收藏
页码：1049 / 1052
页数：4
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