Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique

被引：34

作者：

Perna, G

Capozzi, V

Minafra, A

Pallara, M

Ambrico, M

机构：

[1] Univ Foggia, Fac Med & Chirurg, I-71100 Foggia, Italy

[2] INFM, Unita Bari, I-70126 Bari, Italy

[3] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy

[4] Univ Bari, Dipartimento Geomineral, I-70126 Bari, Italy

[5] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy

来源：

EUROPEAN PHYSICAL JOURNAL B | 2003年 / 32卷 / 03期

关键词：

D O I：

10.1140/epjb/e2003-00107-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin films of n-type CdSe have been grown on a quartz substrate by laser ablating a target obtained by mixing CdSe and metallic In powders. The effects of different doping concentration of In have been investigated. X-ray diffraction spectra show that at low In density only the CdSe lattice is present in the deposited film, whereas CdIn2Se4 and InSe compounds are deposited at higher In concentration. Band gap narrowing and band tails are observed in the absorption spectra when the In concentration increases. Photoluminescence spectra show band-band recombinations from 10 K to room temperature.

引用

页码：339 / 344

页数：6

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