Interface influence on structural properties of InAs/GaSb type-II superlattices

被引：0
|
作者：
Kubacka-Traczyk, Justyna [1 ]
Sankowska, Iwona [1 ]
Kaniewski, Janusz [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
OPTICA APPLICATA | 2009年 / 39卷 / 04期
关键词：
interface; II type superlattice; InAs/GaSb; GROWTH; OPTIMIZATION;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Theoretical studies of interface impact on structural properties of InAs/GaSb type-II superlattices were carried out. Multilayer structures used for mid-infrared detection were considered. The superlattices examined consisted of 190 pairs of 9 monolayers (MLs) of InAs and 10 MLs of GaSb. Both types of interfaces, i.e., "GaAs-like" as well as "InSb-like", were analyzed. The simulations were performed using dynamical theory of diffraction for different thicknesses of interface layers. The lattice mismatch was extracted from X-ray diffraction profiles. The analysis performed shows that the strain-balanced InAs/GaSb superlattice can be optimized by using thin InSb-like or GaAs-like interface layers simultaneously.
引用
收藏
页码：875 / 879
页数：5
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