Study of topological morphology and optical properties of SnO2 thin films deposited by RF sputtering technique

被引：41

作者：

Alhuthali, A. ^{[1
]}

El-Nahass, M. M. ^{[2
]}

Atta, A. A. ^{[1
,2
]}

Abd El-Raheem, M. M. ^{[1
,3
]}

Elsabawy, Khaled M. ^{[4
,5
]}

Hassanien, A. M. ^{[6
]}

机构：

[1] Taif Univ, Dept Phys, Fac Sci, At Taif 21974, Saudi Arabia

[2] Ain Shams Univ, Dept Phys, Fac Educ, Cairo 11757, Egypt

[3] Sohag Univ, Dept Phys, Fac Sci, Sohag 82524, Egypt

[4] Tanta Univ, Dept Chem, Mat Sci Unit, Fac Sci, Tanta 31725, Egypt

[5] Taif Univ, Dept Chem, Fac Sci, At Taif 21974, Saudi Arabia

[6] Shaqra Univ, Fac Sci & Humanity Studies Al Quwayiyah, Dept Phys, Al Quwayiyah 11971, Saudi Arabia

来源：

JOURNAL OF LUMINESCENCE | 2015年 / 158卷

关键词：

Transparent oxide; RF Sputtering; Optical Properties; Effect of annealing temperature; CHEMICAL-VAPOR-DEPOSITION; TIN-OXIDE; ELECTRICAL-PROPERTIES; PHOTOLUMINESCENCE; TEMPERATURE; ABSORPTION; BEHAVIOR; ENERGY; CDS;

D O I：

10.1016/j.jlumin.2014.09.044

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Transparent conducting thin films of tin dioxide (SnO2) were prepared on glass substrates by RF sputtering technique. The as-deposited films were annealed at different temperatures (473, 673 and 823 K) for 3 h in air under normal atmospheric pressure. The film structure was characterized using atomic force microscopy (AFM). The optical properties of the prepared and annealed films were studied using their reflectance and transmittance spectra. The Urbach energy was found to decrease with increasing annealing temperature. The estimated direct optical band gap (E-g(d)) values were found to decrease by annealing temperature. The photoluminescence (PL) spectroscopy measurement of the SnO2 film shows that the band to band emission peak at E-g(PL)=4.18 eV. The dispersion curves of the refractive index of SnO2 thin films were found to obey the single oscillator model. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：165 / 171

页数：7

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