Cell signal measurement for high-density drams

被引：4

作者：

Vollrath, JE ^{[1
]}

机构：

[1] Siemens AG, D-01099 Dresden, Germany

来源：

ITC - INTERNATIONAL TEST CONFERENCE 1997, PROCEEDINGS: INTEGRATING MILITARY AND COMMERCIAL COMMUNICATIONS FOR THE NEXT CENTURY | 1997年

关键词：

D O I：

10.1109/TEST.1997.639616

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Important parameters for scaling high-density DRAMs are the cell signal of each memory cell and the signal level applied to the sense amplifier during sensing. Moreover, failing memory cells need to be 'characterized' before a physical failure analysis can be carried out in order to determine the root causes of likely problems. It is common practice to put small pads on the bit lines (BLs) and probe the bit-line signal with so-called pico-probes. This paper describes a new approach to measuring the cell signal using a normal test procedure without pico-probes. Measurements determine the cell signal, BL, word line (WL) and isolator coupling.

引用

页码：209 / 216

页数：8