Exciton dephasing in self-assembled CdSe quantum dots

被引：26
作者：
Palinginis, P [1 ]
Wang, HL
Goupalov, SV
Citrin, DS
Dobrowolska, M
Furdyna, JK
机构：
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[5] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.70.073302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report experimental studies of exciton dephasing in self-assembled CdSe quantum dots using techniques based on spectral hole burning. The hole-burning response reveals directly in the spectral domain the zero-phonon-line (ZPL) as well as contributions from acoustic and LO-phonon assisted transitions. The observed strong coupling to acoustic phonons is in good agreement with theoretical expectation. The measured decoherence rate associated with the ZPL is as small as 3.5 mueV, comparable to that in self-assembled InGaAs quantum dots.
引用
收藏
页码：073302 / 1
页数：4
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共 25 条
  • [1] Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots -: art. no. 041308
    Bayer, M
    Forchel, A
    [J]. PHYSICAL REVIEW B, 2002, 65 (04) : 1 - 4
  • [2] Acoustic phonon broadening mechanism in single quantum dot emission
    Besombes, L
    Kheng, K
    Marsal, L
    Mariette, H
    [J]. PHYSICAL REVIEW B, 2001, 63 (15):
  • [3] Long lived coherence in self-assembled quantum dots
    Birkedal, D
    Leosson, K
    Hvam, JM
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (22) : 227401 - 227401
  • [4] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS
    BLACHA, A
    PRESTING, H
    CARDONA, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01): : 11 - 36
  • [5] Ultralong dephasing time in InGaAs quantum dots
    Borri, P
    Langbein, W
    Schneider, S
    Woggon, U
    Sellin, RL
    Ouyang, D
    Bimberg, D
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (15) : 157401 - 157401
  • [6] Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells
    Fan, XD
    Takagahara, T
    Cunningham, JE
    Wang, HL
    [J]. SOLID STATE COMMUNICATIONS, 1998, 108 (11) : 857 - 861
  • [7] Photon beats from a single semiconductor quantum dot
    Flissikowski, T
    Hundt, A
    Lowisch, M
    Rabe, M
    Henneberger, F
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (14) : 3172 - 3175
  • [8] Exciton dephasing and absorption line shape in semiconductor quantum dots
    Goupalov, SV
    Suris, RA
    Lavallard, P
    Citrin, DS
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (05) : 1009 - 1014
  • [9] GOUPALOV SV, UNPUB
  • [10] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS
    GRUNDMANN, M
    CHRISTEN, J
    LEDENTSOV, NN
    BOHRER, J
    BIMBERG, D
    RUVIMOV, SS
    WERNER, P
    RICHTER, U
    GOSELE, U
    HEYDENREICH, J
    USTINOV, VM
    EGOROV, AY
    ZHUKOV, AE
    KOPEV, PS
    ALFEROV, ZI
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (20) : 4043 - 4046
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