On the Air Stability of n-Channel Organic Field-Effect Transistors: A Theoretical Study of Adiabatic Electron Affinities of Organic Semiconductors

被引:139
作者
Chang, Yu-Chang [1 ]
Kuo, Ming-Yu [2 ]
Chen, Chih-Ping [1 ]
Lu, Hsiu-Feng [1 ]
Chao, Ito [1 ]
机构
[1] Acad Sinica, Inst Chem, Taipei 11529, Taiwan
[2] Natl Chi Nan Univ, Dept Appl Chem, Nantou 545, Taiwan
关键词
THIN-FILM TRANSISTORS; POLYCYCLIC AROMATIC-HYDROCARBONS; DENSITY-FUNCTIONAL THEORY; DIIMIDE SEMICONDUCTORS; PERFORMANCE; MOBILITY; CORE; NAPHTHALENE; TRANSPORT; ANTHRACENE;
D O I
10.1021/jp1025625
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In an air-stable n-channel organic field-effect transistor (OFET), the charge carrier (i.e., the radical anion of an organic semiconductor (OSC)) has to be stable enough against ambient oxidants such as O-2 and H2O. It has been suggested that OSCs with large enough electron affinity (EA) will possess air-stable charge carriers, but extensive correlation between air stability and EA has not been established. We have studied 47 existing n-channel OSCs with different molecular core structures and device configurations. A correlation between calculated adiabatic EA and air stability was established, and the threshold value found at the B3LYP/6-31+G*//B3LYP/6-31G** level for air stability was ca. 2.8 eV. This information provides a foundation for theoretical screening of potential n-channel OFETs before their synthesis and facilitates the discussion of the complex device degradation mechanism. Analysis of EAs of derivatives of perylenetetracarboxylic diimide (PDI) and naphthalenetetracarboxylic diimide (NDI) also sheds light on the roles of various substituents.
引用
收藏
页码:11595 / 11601
页数:7
相关论文
共 67 条
[1]   n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].
Ando, S ;
Murakami, R ;
Nishida, J ;
Tada, H ;
Inoue, Y ;
Tokito, S ;
Yamashita, Y .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997
[2]   High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups [J].
Ando, S ;
Nishida, JI ;
Tada, H ;
Inoue, Y ;
Tokito, S ;
Yamashita, Y .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (15) :5336-5337
[3]   The larger acenes: Versatile organic semiconductors [J].
Anthony, John E. .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2008, 47 (03) :452-483
[4]   Functionalized acenes and heteroacenes for organic electronics [J].
Anthony, John E. .
CHEMICAL REVIEWS, 2006, 106 (12) :5028-5048
[5]   Mechanism of 1,4,5,8-naphthalene tetracarboxylic acid dianhydride hydrolysis and formation in aqueous solution [J].
Barros, TC ;
Cuccovia, IM ;
Farah, JPS ;
Masini, JC ;
Chaimovich, H ;
Politi, MJ .
ORGANIC & BIOMOLECULAR CHEMISTRY, 2006, 4 (01) :71-82
[6]   Calculation of electron affinities of polycyclic aromatic hydrocarbons and solvation energies of their radical anion [J].
Betowski, Leon D. ;
Enlow, Mark ;
Riddick, Lee ;
Aue, Donald H. .
JOURNAL OF PHYSICAL CHEMISTRY A, 2006, 110 (47) :12927-12946
[7]   N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes [J].
Cai, Xiuyu ;
Burand, Michael W. ;
Newman, Christopher R. ;
da Silva Filho, Demetrio A. ;
Pappenfus, Ted M. ;
Bader, Mamoun M. ;
Bredas, Jean-Luc ;
Mann, Kent R. ;
Frisbie, C. Daniel .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (30) :14590-14597
[8]   Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics [J].
Chen, Fang-Chung ;
Liao, Cheng-Hsiang .
APPLIED PHYSICS LETTERS, 2008, 93 (10)
[9]   Air stable n-channel organic semiconductors for thin film transistors based on fluorinated derivatives of perylene diimides [J].
Chen, H. Z. ;
Ling, M. M. ;
Mo, X. ;
Shi, M. M. ;
Wang, M. ;
Bao, Z. .
CHEMISTRY OF MATERIALS, 2007, 19 (04) :816-824
[10]   Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Ewbank, PC ;
da Silva, DA ;
Brédas, JL ;
Miller, LL ;
Mann, KR ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292