On the temperature stability of integrated MIS low-pass filter structures

被引：2
|
作者：
Kuehn, M. [1 ]
Aeron, Mi. [1 ]
Florange, R. [1 ]
Kliem, H. [1 ]
机构：
[1] Univ Saarland, Inst Elect Engn Phys, D-66041 Saarbrucken, Germany
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 06期
关键词：
low-pass filter; integrated; passive; granular; disordered; metal thin film; temperature stability; pd; palladium; hydrogen;
D O I：
10.1016/j.sse.2007.03.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrated analogue MIS low-pass filters are considered. They consist mainly of a thin metal film representing a distributed resistance R on a dielectric representing a distributed capacitance C. A major criterion with respect to their technical application is the temperature stability. Assuming that the capacitance does not change with varying temperature the crucial point to meet the requirements of reliability is the resistivity of the metal film. In order to improve the temperature stability we applied an annealing process for filter structures with Pd as the metal film. The results show that the temperature stability can be improved by a temperature conditioning process. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：931 / 935
页数：5
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