Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond

被引：0

作者：

Lee, CH ^{[1
]}

Yoon, JM ^{[1
]}

Lee, C ^{[1
]}

Yang, HM ^{[1
]}

Kim, KN ^{[1
]}

Kim, TY ^{[1
]}

Kang, HS ^{[1
]}

Ahn, YJ ^{[1
]}

Park, D ^{[1
]}

Kim, K ^{[1
]}

机构：

[1] Samsung Elect Co, Adv Technol Dev, Semicond R&D Div, Yongin 449711, Kyunggi Do, South Korea

来源：

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

in this paper, a highly manufacturable 512M FinFET DRAM with novel body tied FinFET cell array transistor on bulk Si substrate has been successfully integrated and the characteristics were compared with RCAT (Recess Channel Array Transistor) and planar cell array transistor DRAM for the first time. We also propose the NWL (Negative Word Line) scheme with low channel doping body tied FinFET for a highly manufacturable FinFET DRAM for sub 60nm technology node.

引用

页码：130 / 131

页数：2