A hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(111)

被引:64
作者
Oshima, C
Itoh, A
Rokuta, E
Tanaka, T
Yamashita, K
Sakurai, T
机构
[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Kagami Mem Lab Mat SCi & Technol, Shinjuku Ku, Tokyo 1690051, Japan
[3] Tohoku Univ, Inst Mat Sci, Aoba Ku, Sendai, Miyagi 9808500, Japan
基金
日本科学技术振兴机构;
关键词
surface and interfaces; epitaxy; phonons; electron energy loss spectroscopy;
D O I
10.1016/S0038-1098(00)00268-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A double-atomic-layer system of monolayer graphene/monolayer h-BN has been prepared in an epitaxial manner on Ni(111) surface. The graphene overlayer formation changes drastically the pristine interface between the h-BN layer and Ni(lll). As a result, a peculiar property of the pristine monolayer h-BN on Ni(111) changes to a bulk-like one. The pi-d orbital hybridization at the interface disappears. Accordingly, a metallic character of monolayer h-BN disappears and softening TO phonons return to the normal one. The reduced lattice constant of h-BN presumably returns to the bulk one. The same phenomenon occurs by surface contaminations instead of monolayer graphene formation. (C) 2000 Published by Elsevier Science Ltd.
引用
收藏
页码:37 / 40
页数:4
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