Topological phases in N-layer ABC graphene/boron nitride moire superlattices

被引:9
作者
Galeano Gonzalez, David Andres [1 ,2 ]
Chittari, Bheema Lingam [3 ]
Park, Youngju [2 ]
Sun, Jin-Hua [4 ]
Jung, Jeil [2 ,5 ]
机构
[1] Univ Antioquia, Inst Fis, AA 1226, Medellin, Colombia
[2] Univ Seoul, Dept Phys, Seoul 02504, South Korea
[3] Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Mohanpur 741246, W Bengal, India
[4] Ningbo Univ, Res Inst Adv Technol, Ningbo 315211, Zhejiang, Peoples R China
[5] Univ Seoul, Dept Smart Cities, Seoul 02504, South Korea
基金
新加坡国家研究基金会;
关键词
BILAYER; SUPERCONDUCTIVITY; INSULATOR; VALLEY; SPIN; MONOLAYER; BEHAVIOR; BANDS;
D O I
10.1103/PhysRevB.103.165112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rhombohedral N = 3 trilayer graphene on hexagonal boron nitride hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flatbands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations.
引用
收藏
页数:8
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