Resistive switching characteristics of a single Zn-doped CuS nanoball anchored with multi-walled carbon nanotubes

被引：25
作者：
Bera, Susnata [1 ]
Katiyar, Ajit K. [1 ]
Sinha, Arun K. [1 ]
Mondal, Suvra P. [1 ,2 ]
Ray, Samit K. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
[2] Natl Inst Technol, Agartala 799055, India
来源：
MATERIALS & DESIGN | 2016年 / 101卷
关键词：
Resistive switching memory; Zn-doped CuS nanoball; Carbon nanotube; Conducting probe atomic force microscopy; Nanoscale memory devices; COPPER SULFIDE;
D O I：
10.1016/j.matdes.2016.03.160
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a new synthesis method to grow Zn-doped CuS (CZS) nanoballs on multi-walled carbon nanotube (MWCNT) surfaces from a single molecular source [Cu(en)(2)ZnCl4]center dot DMSO complex. The single precursor acts as the source for both Cu+2 and Zn+2 ions for the formation of nanocrystalline balls. High resolution electron micrographs clearly revealed the formation of crystalline CZS nanoballs on the surface of MWCNT. The chemical composition and local bonding of CZS have been examined by XPS and UPS analysis. A current-voltage (I-V) characteristic on single CZS nanoballs was carried out using conducting probe atomic force microscopy (CAFM). A clear hysteresis in I-V characteristics demonstrated the bipolar resistive switching in the nanoballs anchored with MWCNTs at low set and reset voltages. The study reveals a novel technique to growdoped semiconductor nanocrystal for its application in resistive switching memory devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：197 / 203
页数：7
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