A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform

被引：39

作者：

Kwan, Alex Man Ho ^{[1
]}

Guan, Yue ^{[1
]}

Liu, Xiaosen ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 08期

关键词：

AlGaN/GaN high electron mobility transistor (HEMT); AlGaN/GaN SBD; GaN smart power platform; lateral field-effect rectifier (L-FER); monolithic integration; on-chip temperature sensing; proportional-to-absolute-temperature (PTAT) voltage source;

D O I：

10.1109/TED.2014.2327386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circuit is designed based on the temperature-dependent characteristics of GaN-based peripheral devices (e.g., heterojunction Schottky barrier diode, enhancement-/depletion-mode high electron mobility transistors, and lateral field-effect rectifiers) that are monolithically integrated with high-voltage power devices. This monolithic integration scheme facilitates the design efforts in taking full advantages of GaN's superior capability to operate at high temperatures. Proper circuit operation was demonstrated at 275 degrees C.

引用

页码：2970 / 2976

页数：7

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