Nonvolatile ferroelectric domain wall memory integrated on silicon

被引：76

作者：

Sun, Haoying ^{[1
,2
]}

Wang, Jierong ^{[1
,2
]}

Wang, Yushu ^{[1
,2
]}

Guo, Changqing ^{[3
]}

Gu, Jiahui ^{[1
,2
]}

Mao, Wei ^{[1
,2
]}

Yang, Jiangfeng ^{[1
,2
]}

Liu, Yuwei ^{[1
,2
]}

Zhang, Tingting ^{[1
,2
]}

Gao, Tianyi ^{[1
,2
]}

Fu, Hanyu ^{[1
,2
]}

Zhang, Tingjun ^{[1
,2
]}

Hao, Yufeng ^{[1
,2
]}

Gu, Zhengbin ^{[1
,2
]}

Wang, Peng ^{[3
]}

Huang, Houbing ^{[4
,5
]}

Nie, Yuefeng ^{[1
,2
]}

机构：

[1] Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[4] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China

[5] Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China

来源：

NATURE COMMUNICATIONS | 2022年 / 13卷 / 01期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

FILMS; OXIDE; POLARIZATION; CONDUCTANCE; BATIO3; CHARGE;

D O I：

10.1038/s41467-022-31763-w

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories. Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.

引用

页数：9

共 60 条

[1] Epitaxial integration of perovskite-based multifunctional oxides on silicon [J].