An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

被引：37
|
作者：
Mukunoki, Yasushige [1 ,2 ]
Konno, Kentaro [2 ]
Matsuo, Tsubasa [2 ]
Horiguchi, Takeshi [3 ]
Nishizawa, Akinori [3 ]
Kuzumoto, Masaki [1 ,2 ]
Hagiwara, Makoto [2 ]
Akagi, Hirofumi [2 ]
机构：
[1] Mitsubishi Electr Corp, Tokyo 1008310, Japan
[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan
[3] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2018年 / 33卷 / 11期
关键词：
MOSFETs; semiconductor device modeling; switching transients; SIC MOSFET; POWER; CAPACITANCE;
D O I：
10.1109/TPEL.2018.2796583
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an improved compact model for a discrete silicon-carbide (SiC) MOSFET. This compact model based on the previous model features a new behavioral model of output characteristics and new nonlinear models of internal capacitors. Simulation with the improved compact model is in better agreement with measurement than that with the previous compact model, as well as transient behavior of the drain-source voltage, the drain current, and the leakage current out of a heatsink. Furthermore, the improved model is useful for constructing the accurate compact model that can reproduce the high-frequency characteristics of the transient waveforms of SiC-MOSFETs. This successful validation indicates that the improved compact model would be a promising tool for a full-simulation-based design system of the power converters using SiC-MOSFETs.
引用
收藏
页码：9834 / 9842
页数：9
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