Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate

被引:0
作者
Aldaz, RI [1 ]
Wiemer, MW [1 ]
Miller, DAB [1 ]
Harris, JS [1 ]
机构
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2004年
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a fully monolithically integrated vertical laser using an InGaAs/GaAs/AlGaAs gain medium directly bonded to a glass substrate with a concave micromirror. The lasing Wavelength is 980nm with maximum output power of 39mW.
引用
收藏
页码:332 / 333
页数:2
相关论文
共 7 条
[1]   Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications [J].
Avrutin, EA ;
Marsh, JH ;
Portnoi, EL .
IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04) :251-278
[2]  
Coldren L. A., 1995, DIODE LASERS PHOTONI
[3]   OPTICAL CLOCK DISTRIBUTION USING A MODE-LOCKED SEMICONDUCTOR-LASER DIODE SYSTEM [J].
DELFYETT, PJ ;
HARTMAN, DH ;
AHMAD, SZ .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1991, 9 (12) :1646-1649
[4]   High-power surface emitting semiconductor laser with extended vertical compound cavity [J].
McInerney, JG ;
Mooradian, A ;
Lewis, A ;
Shchegrov, A ;
Strzelecka, EM ;
Lee, D ;
Watson, JP ;
Liebman, A ;
Carey, GP ;
Cantos, BD ;
Hitchens, WR ;
Heald, D .
ELECTRONICS LETTERS, 2003, 39 (06) :523-525
[5]   Design, fabrication and testing of microlens arrays for sensors and microsystems [J].
Nussbaum, P ;
Volke, R ;
Herzig, HP ;
Eisner, M ;
Haselbeck, S .
PURE AND APPLIED OPTICS, 1997, 6 (06) :617-636
[6]  
SERKLAND DK, 2003, P SOC PHOTO-OPT INS, V4994, P30
[7]   Low temperature bonding for microfabrication of chemical analysis devices [J].
Wang, HY ;
Foote, RS ;
Jacobson, SC ;
Schneibel, JH ;
Ramsey, JM .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 45 (03) :199-207