Materials science issues of plasma source ion implantation

被引：19

作者：

Nastasi, M ^{[1
]}

Elmoursi, AA ^{[1
]}

Faehl, RJ ^{[1
]}

Hamdi, AH ^{[1
]}

Henins, I ^{[1
]}

Malaczynski, GW ^{[1
]}

Mantese, JV ^{[1
]}

Munson, C ^{[1
]}

Qui, X ^{[1
]}

Reass, WA ^{[1
]}

Rej, DJ ^{[1
]}

Scheuer, JT ^{[1
]}

Speck, CE ^{[1
]}

Walter, KC ^{[1
]}

Wood, BP ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING | 1996年 / 396卷

关键词：

D O I：

10.1017/CBO9780511565007.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：455 / 466

页数：12

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[41] Boron doping of silicon by plasma source ion implantation [J].

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[44] PLASMA SOURCE ION-IMPLANTATION - A NEW, COST-EFFECTIVE, NON-LINE-OF-SIGHT TECHNIQUE FOR ION-IMPLANTATION OF MATERIALS [J].

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[45] Chromium plating pollution source reduction by plasma source ion implantation [J].

Chen, A ;

Qiu, X ;

Sridharan, K ;

Horne, WG ;

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[46] Simulation methods of ion sheath dynamics in plasma source ion implantation [J].

WANG Jiuli ZHANG Guling WANG Younian LIU Yuanfu LIU Chizi YANG Size Institute of Physics Chinese Academy of Sciences Beijing China State Key Laboratory of Materials Modification by Laser Ion and Electron Beams Dalian China Correspondence should be addressed to Wang Jiuli email wjl aphyiphyaccn .

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[47] Simulation methods of ion sheath dynamics in plasma source ion implantation [J].