Sub-micrometer pyroelectric tomography of AlScN films

被引：2

作者：

Tappertzhofen, S. ^{[1
]}

Bette, S. ^{[2
]}

Sievers, F. ^{[1
]}

Fichtner, S. ^{[3
,4
]}

Broeker, S. ^{[3
]}

Schmitz-Kempen, T. ^{[2
]}

机构：

[1] TU Dortmund Univ, Dept Elect Engn & Informat Technol, Chair Micro & Nanoelect, Emil Figge Str 68, D-44227 Dortmund, Germany

[2] AixACCT Syst GmbH, Talbotstr 25, D-52068 Aachen, Germany

[3] Univ Kiel, Tech Fac, Mat & Proc Nanosyst Technol, Kaiserstr 2, D-24143 Kiel, Germany

[4] Fraunhofer Inst Silicon Technol, Fraunhoferstr 1, D-25524 Itzehoe, Germany

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 24期

关键词：

INTENSITY-MODULATION METHOD; THERMAL-CONDUCTIVITY; METHOD LIMM; DISTRIBUTIONS; NITRIDE;

D O I：

10.1063/5.0047002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on one- to three-dimensional characterization of the pyroelectric properties of aluminum scandium nitride. By means of the laser intensity modulation method, we reconstructed the in-depth distribution of the spontaneous polarization with sub-micrometer resolution. The reconstructed profiles of the spontaneous polarization indicate that the thermal diffusivity and its temperature-dependence differ significantly from what is reported for pure aluminum nitride, which we attribute to the dominant role of phonon-alloy scattering for the heat transfer.

引用

页数：5

共 30 条

[1] Thermal conductivity measurement of AlN films by fast photothermal method. [J].

Aissa, K. Ait ;

Semmar, N. ;

Meneses, D. De Sousa ;

Le Brizoual, L. ;

Gaillard, M. ;

Petit, A. ;

Jouan, P-Y ;

Boulmer-Leborgne, C. ;

Djouadi, M. A. .

6TH EUROPEAN THERMAL SCIENCES CONFERENCE (EUROTHERM 2012), 2012, 395

[2] Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature [J].

Belkerk, B. E. ;

Bensalem, S. ;

Soussou, A. ;

Carette, M. ;

Al Brithen, H. ;

Djouadi, M. A. ;

Scudeller, Y. .

APPLIED PHYSICS LETTERS, 2014, 105 (22)

[3] Infrared-laser based characterization of the pyroelectricity in AlScN thin-films [J].

Bette, Sebastian ;

Fichtner, Simon ;

Broeker, Sebastian ;

Nielen, Lutz ;

Schmitz-Kempen, Thorsten ;

Wagner, Bernhard ;

Van Buggenhout, Carl ;

Tiedke, Stephan ;

Tappertzhofen, Stefan .

THIN SOLID FILMS, 2019, 692

[4] LASER INTENSITY MODULATION METHOD: THE INTERPOLATION PROCEDURE FOR DETERMINATION OF SPATIAL DISTRIBUTION OF POLARIZATION [J].

Biryukov, S. ;

Sotnikov, A. ;

Weihnacht, M. .

FERROELECTRICS, 1996, 185 :281-284

[5] Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs [J].

Chatterjee, Bikramjit ;

Lundh, James Spencer ;

Song, Yiwen ;

Shoemaker, Daniel ;

Baca, Albert G. ;

Kaplar, Robert J. ;

Beechem, Thomas E. ;

Saltonstall, Christopher ;

Allerman, Andrew A. ;

Armstrong, Andrew M. ;

Klein, Brianna A. ;

Bansal, Anushka ;

Seyf, Hamid R. ;

Talreja, Disha ;

Pogrebnyakov, Alexej ;

Heller, Eric ;

Gopalan, Venkatraman ;

Henry, Asegun S. ;

Redwing, Joan M. ;

Foley, Brian ;

Choi, Sukwon .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (03) :461-464

[6] Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films [J].

Favaloro, T. ;

Bahk, J. -H. ;

Shakouri, A. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2015, 86 (02)

[7] AlScN: A III-V semiconductor based ferroelectric [J].

Fichtner, Simon ;

Wolff, Niklas ;

Lofink, Fabian ;

Kienle, Lorenz ;

Wagner, Bernhard .

JOURNAL OF APPLIED PHYSICS, 2019, 125 (11)

[8] Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems [J].

Fichtner, Simon ;

Wolff, Niklas ;

Krishnamurthy, Gnanavel ;

Petraru, Adrian ;

Bohse, Sascha ;

Lofink, Fabian ;

Chemnitz, Steffen ;

Kohlstedt, Hermann ;

Kienle, Lorenz ;

Wagner, Bernhard .

JOURNAL OF APPLIED PHYSICS, 2017, 122 (03)

[9] Stress controlled pulsed direct current co-sputtered Al1-xScxN as piezoelectric phase for micromechanical sensor applications [J].

Fichtner, Simon ;

Reimer, Tim ;

Chemnitz, Steffen ;

Lofink, Fabian ;

Wagner, Bernhard .

APL MATERIALS, 2015, 3 (11)

[10] Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates [J].

Hardy, Matthew T. ;

Downey, Brian P. ;

Nepal, Neeraj ;

Storm, David F. ;

Katzer, D. Scott ;

Meyer, David J. .

APPLIED PHYSICS LETTERS, 2017, 110 (16)

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