Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

被引：1

作者：

Oh, Dohyun ^{[1
,2
]}

Yun, Dong Yeol ^{[2
]}

Cho, Woon-Jo ^{[1
]}

Kim, Tae Whan ^{[2
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Optoelect Convergence Syst, Seoul 136791, South Korea

[2] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

ROOM-TEMPERATURE; TRANSPARENT; FABRICATION; DIODE;

D O I：

10.7567/JJAP.53.086502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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