Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing

被引:60
作者
Huang, Rui [1 ,2 ]
Robl, Werner [3 ]
Ceric, Hajdin [2 ]
Detzel, Thomas [4 ]
Dehm, Gerhard [5 ,6 ]
机构
[1] Kompetenzzentrum Automobil & Ind Elekt KAI GmbH, A-9500 Villach, Austria
[2] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
[3] Infineon Technol AG, D-93049 Regensburg, Germany
[4] Infineon Technol Austria AG, A-9500 Villach, Austria
[5] Univ Leoben, Dept Mat Phys, A-8700 Leoben, Austria
[6] Austrian Acad Sci, Erich Schmid Inst Mat Sci, A-8700 Leoben, Austria
关键词
Copper; film stress; microstructure; self-annealing; sheet resistance; ROOM-TEMPERATURE RECRYSTALLIZATION; ABNORMAL GRAIN-GROWTH; COPPER-FILMS; KINETICS; RESISTIVITY;
D O I
10.1109/TDMR.2009.2032768
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electroplated copper films are known to change their microstructure due to the self-annealing effect. The self-annealing effect of electroplated copper films was investigated by measuring the time dependence of the film stress and sheet resistance for different layer thicknesses between 1.5 and 20 mu m. While the sheet resistance was found to decrease as time elapsed, a size-dependent change in film stress was observed. Films with the thickness of 5 mu m and below decrease in stress, while thicker films initially reveal an increase in film stress followed by a stress relaxation at a later stage. This behavior is explained by the superposition of grain growth and grain-size-dependent yielding.
引用
收藏
页码:47 / 54
页数:8
相关论文
共 30 条
[1]   Damascene copper electroplating for chip interconnections [J].
Andricacos, PC ;
Uzoh, C ;
Dukovic, JO ;
Horkans, J ;
Deligianni, H .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :567-574
[2]   Two-step room temperature grain growth in electroplated copper [J].
Brongersma, SH ;
Richard, E ;
Vervoort, I ;
Bender, H ;
Vandervorst, W ;
Lagrange, S ;
Beyer, G ;
Maex, K .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3642-3645
[3]  
Courtney TH., 1990, MECH BEHAV MAT
[4]   Thermodynamics and kinetics of room-temperature microstructural evolution in copper films [J].
Detavernier, C ;
Rossnagel, S ;
Noyan, C ;
Guha, S ;
Cabral, C ;
Lavoie, C .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2874-2881
[5]  
DOERNER MF, 1988, CRC CRIT R SOLID ST, V14, P3
[6]   Full copper wiring in a sub-0.25 μm CMOS ULSI technology [J].
Edelstein, D ;
Heidenreich, J ;
Goldblatt, R ;
Cote, W ;
Uzoh, C ;
Lustig, N ;
Roper, P ;
McDevitt, T ;
Motsiff, W ;
Simon, A ;
Dukovic, J ;
Wachnik, R ;
Rathore, H ;
Schulz, R ;
Su, L ;
Luce, S ;
Slattery, J .
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :773-776
[7]  
Freund L., 2003, THIN FILM MAT STRESS, DOI 10.1017/CBO9780511754715
[8]   Mechanisms for microstructure evolution in electroplated copper thin films near room temperature [J].
Harper, JME ;
Cabral, C ;
Andricacos, PC ;
Gignac, L ;
Noyan, IC ;
Rodbell, KP ;
Hu, CK .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2516-2525
[9]   In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films [J].
Hau-Riege, SP ;
Thompson, CV .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :309-311
[10]   COPPER INTERCONNECTION INTEGRATION AND RELIABILITY [J].
HU, CK ;
LUTHER, B ;
KAUFMAN, FB ;
HUMMEL, J ;
UZOH, C ;
PEARSON, DJ .
THIN SOLID FILMS, 1995, 262 (1-2) :84-92