Synthesis and characterization of high quality {100} diamond single crystal

被引:9
作者
Xie, Xuejian [1 ,2 ]
Wang, Xiwei [1 ,2 ,3 ]
Peng, Yan [1 ,2 ]
Cui, Yingxin [1 ,2 ]
Chen, Xiufang [1 ,2 ]
Hu, Xiaobo [1 ,2 ]
Xu, Xiangang [1 ,2 ]
Yu, Peng [2 ,4 ]
Wang, Ruiqi [2 ,4 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Collaborat Innovat Ctr Global Energy Interconnect, Jinan 250061, Peoples R China
[3] Jinan Zhongwu New Mat Co Ltd, Jinan 250101, Peoples R China
[4] State Grid Shandong Elect Power Res Inst, Jinan 250001, Peoples R China
关键词
HIGH-TEMPERATURE; SILICON-CARBIDE; HPHT SYNTHESIS; DOPED DIAMOND; NITROGEN; GROWTH; CRYSTALLIZATION; SPECTROSCOPY; HYDROGEN; SYSTEM;
D O I
10.1007/s10854-017-6735-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Non-destructive characterization of diamond plate can provide abundant information. Consequently, it will help improve the growth technique. In this paper, unintentionally doped {100} diamond single crystal (type Ib) was synthesized by the temperature gradient growth (TGG) method under high pressure (similar to 6.5 GPa) and high temperature (similar to 1500 degrees C) condition. The crystal morphology was observed by confocal laser scanning microscope (CLSM). The result indicated there was a pit on diamond surface. UV/Vis transmission measurement indicated the maximum transmittance of our sample was about 9% lower than that of theoretical value. Fourier-transformation infrared spectroscopy (FTIR) measurement confirmed that the nitrogen concentration was about 53 ppm. High resolution X-Ray diffractometer (HRXRD) was employed to evaluated the crystalline quality, and result showed that the full width of half maximum (FWHM) at (400) and (111) rocking curves were 56.9'', 23.7'', respectively, which revealed the good crystalline quality. In addition, the diffraction peak of (400) lattice plane exhibited an increase trend with the X-ray beam position, showing the (100) lattice surface was convex bended.
引用
收藏
页码:9813 / 9819
页数:7
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