Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

被引:54
作者
Wan, Chang Jin [1 ,2 ,3 ]
Zhu, Li Qiang [3 ]
Wan, Xiang [1 ,2 ]
Shi, Yi [1 ,2 ]
Wan, Qing [1 ,2 ,3 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
STRETCHED-EXPONENTIAL RELAXATION; OXIDE; MEMORY; TRANSITION; PLASTICITY; DYNAMICS; LOGIC;
D O I
10.1063/1.4941080
中图分类号
O59 [应用物理学];
学科分类号
摘要
The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors. (C) 2016 AIP Publishing LLC.
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页数:5
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