Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode

Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G (V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.