Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity

被引：2

作者：

Tomita, Takuro ^{[1
]}

Deki, Manato ^{[1
,3
]}

Yanagita, Eizo ^{[1
]}

Bando, Yota ^{[1
]}

Naoi, Yoshiki ^{[1
]}

Makino, Takahiro ^{[2
]}

Ohshima, Takeshi ^{[2
]}

机构：

[1] Tokushima Univ, Fac Engn, 2-1 Minamijosanjima, Tokushima, Japan

[2] Natl Inst Quantum & Radiol Sci & Technol, Watanuki, Gunma, Japan

[3] Nagoya Univ, CIRFE, Inst Mat Syst Sustainabil IMaSS, Chikusa Ku, Nagoya, Aichi, Japan

来源：

JOURNAL OF LASER MICRO NANOENGINEERING | 2017年 / 12卷 / 02期

关键词：

femtosecond laser; silicon carbide; electrical conductivity; temperature dependence; modification; ABLATION; SURFACE; FILMS; SPINS;

D O I：

10.2961/jlmn.2017.02.0004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependence of the electrical conductivity of a femtosecond-laser-modified region in silicon carbide has been examined. The current-voltage characteristics of the modified region showed ohmic characteristics. The specific resistivity exhibited a dramatic decrease of four orders of magnitude in response to a temperature increase of 80 to 400 K. The temperature dependence of the specific resistance was successfully fit by a double exponential curve, indicating two defect levels. This result means that two types of levels were induced by the laser irradiation. The irradiation fluence dependence of the energies of the two levels and the population ratios between them are discussed herein.

引用

页码：72 / 75

页数：4

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