Characterization of IGBT Modules for System EMI Simulation

被引:11
作者
Qi, Tao [1 ]
Graham, Jeff [2 ]
Sun, Jian [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Fairchild Controls Corp, Frederick, MD 21701 USA
来源
2010 TWENTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2010年
关键词
D O I
10.1109/APEC.2010.5433545
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
EMI filtering is a critical driver for volume and weight for many applications, particularly in airborne and other mobile platforms. Because of the lack of ability to accurately predict system EMI behavior, EMI filter design usually cannot start until prototype EMI measurement results become available. This often leads to costly schedule delay and disruption, and the resulting design is suboptimal at the best. To solve this problem, systematic EMI modeling method is needed to enable the development of optimal system EMI solutions concurrent with the design of the rest of the system. This paper proposes a piece-wise linear model for IGBT (Insulated Gate Bipolar Transistor) modules for EMI simulation with sufficient accuracy and simplicity. Instead of physics-based models the proposed model is composed of a simple piece-wise linear circuit with parameters that can be extracted from the datasheet or simple device measurement. While the model is simple and easy to use, it can achieve sufficient accuracy required for EMI modeling. The proposed model is applied to a three-phase PFC and validated by comparison of model prediction with experimental measurements.
引用
收藏
页码:2220 / 2225
页数:6
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