Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：71

作者：

Kim, Yong-Hoon ^{[1
,2
]}

Han, Min-Koo ^{[2
]}

Han, Jeong-In ^{[1
]}

Park, Sung Kyu ^{[3
]}

机构：

[1] Korea Elect Technol Inst, Flexible Display Res Ctr, Gyeonggi 463816, South Korea

[2] Seoul Natl Univ, Dept Elect Engn, Seoul 151742, South Korea

[3] Chonbuk Natl Univ, Convergence Mat & Devices Res Lab, Dept Text Engn, Jeonju 561756, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 05期

关键词：

a-IGZO; metallic composition; solution-process; thin-film transistor; HIGH-PERFORMANCE; ROOM-TEMPERATURE; SEMICONDUCTORS; FABRICATION;

D O I：

10.1109/TED.2010.2043179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The sol-gel-processed a-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a-IGZO TFTs with a mobility of 0.5-2 cm(2)/V.s, on/off current ratio > 10(7), and a subthreshold slope of as steep as 1.5 V/dec were obtained.

引用

页码：1009 / 1014

页数：6

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