Radiotracer identification of Ti, V and Cr band gap states in 4H- and 6H-SiC

被引：11

作者：

Achtziger, N ^{[1
]}

Grillenberger, J ^{[1
]}

Witthuhn, W ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

titanium; vanadium; chromium; transition metal; DLTS; deep levels; band offset;

D O I：

10.4028/www.scientific.net/MSF.264-268.541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Band gap states of Ti, V, and Cr in 4H- and 6H-SiC are definitely identified by the elemental transmutation of radioactive tracer isotopes and characterized by Deep Level Transient Spectroscopy (DLTS). V and Cr have a deep level in both polytypes, whereas levels of Ti and Cr close to the conduction band are observed in the polytype 4H only. Most of the levels are split due to the occupation of inequivalent lattice sites. Comparing the level position in both polytypes, an estimate of 0.22(6) eV for the conduction band offset is derived.

引用

页码：541 / 544

页数：4

共 16 条

[1] RECOIL IMPLANTATION OF RADIOACTIVE TRANSITION-METALS AND THEIR INVESTIGATION IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

ACHTZIGER, N ;

GOTTSCHALK, H ;

LICHT, T ;

MEIER, J ;

RUB, M ;

REISLOHNER, U ;

WITTHUHN, W .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2370-2372

[2] Band gap states of Ti, V, and Cr in 4H silicon carbide [J].

Achtziger, N ;

Witthuhn, W .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :110-112

[3]

ACHTZIGER N, 1997, IN PRESS APPL PHYS A

[4]

ACHTZIGER N, UNPUB PHYS REV B

[5] Band offsets and electronic structure of SiC/SiO2, interfaces [J].

Afanas'ev, VV ;

Bassler, M ;

Pensl, G ;

Schulz, MJ ;

vonKamienski, ES .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :3108-3114

[6]

BAUR J, 1997, IN PRESS PHYS STAT A, V126

[7] Electrical properties of the titanium acceptor in silicon carbide [J].

Dalibor, T ;

Pensl, G ;

Nordell, N ;

Schoner, A .

PHYSICAL REVIEW B, 1997, 55 (20) :13618-13624

[8] DETERMINATION OF THE BAND OFFSETS OF THE 4H-SIC/6H-SIC HETEROJUNCTION USING THE VANADIUM DONOR (O/+) LEVEL AS A REFERENCE [J].

EVWARAYE, AO ;

SMITH, SR ;

MITCHEL, WC .

APPLIED PHYSICS LETTERS, 1995, 67 (22) :3319-3321

[9] SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT [J].

HOBGOOD, HM ;

GLASS, RC ;

AUGUSTINE, G ;

HOPKINS, RH ;

JENNY, J ;

SKOWRONSKI, M ;

MITCHEL, WC ;

ROTH, M .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1364-1366

[10] ELECTRONIC-PROPERTIES OF CUBIC AND HEXAGONAL SIC POLYTYPES FROM AB-INITIO CALCULATIONS [J].

KACKELL, P ;

WENZIEN, B ;

BECHSTEDT, F .

PHYSICAL REVIEW B, 1994, 50 (15) :10761-10768

← 1 2 →