Atomic Arrangement in Metal-Doped NiS2 Boosts the Hydrogen Evolution Reaction in Alkaline Media

被引:231
作者
Yin, Jie [1 ]
Jin, Jing [1 ]
Zhang, Hong [3 ]
Lu, Min [1 ]
Peng, Yong [3 ]
Huang, Bolong [2 ]
Xi, Pinxian [1 ]
Yan, Chun-Hua [1 ,4 ]
机构
[1] Lanzhou Univ, Coll Chem & Chem Engn, State Key Lab Appl Organ Chem, Key Lab Nonferrous Met Chem & Resources Utilizat, Lanzhou 730000, Gansu, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hong Hum, Kowloon, Hong Kong, Peoples R China
[3] Lanzhou Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
[4] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Rare Earth Mat Chem & Applicat, PKU HKU Joint Lab Rare Earth Mat & Bioinorgan Che, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
atomic rearrangement; cobalt; electron configuration; hydrogen evolution reaction (HER); nanosheets; ACTIVE EDGE SITES; OXYGEN-REDUCTION; WATER; EFFICIENT; NI3S2; ELECTROCATALYSTS; CATALYSTS; MOS2; IDENTIFICATION; NANOWIRES;
D O I
10.1002/anie.201911470
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a novel modulation strategy by introducing transition metals into NiS2 nanosheets (NSs) to flexibly optimize the electronic configurations and atomic arrangement. The Co-NiS2 NSs exhibit excellent hydrogen evolution reaction (HER) performance with an overpotential of 80 mV at j=10 mA cm(-2) and long-term stability of 90 h in alkaline media. The turnover frequencies (TOFs) of 0.55 and 4.1 s(-1) at an overpotential of 100 and 200 mV also confirm their remarkable performance. DFT calculations reveal that the surface dopants abnormally sensitize surface Ni-3d bands in the long-range order towards higher electron-transfer activity, acting as the electron-depletion center. Meanwhile, the high lying surface S-sites possess substantially high selectivity for splitting the adsorbing H2O that guarantee the high HER performance within alkaline conditions. This work opens opportunities for enhancing water splitting by atomic-arrangement-assisted electronic modulation via a facile doping strategy.
引用
收藏
页码:18676 / 18682
页数:7
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