Energy dispersive spectroscopic measurement of charge traps in MoTe2

Spectroscopic techniques are vital to determine the energy distribution of trapped states in semiconducting materials to assess the quality and efficiency of electronic devices. However, there is a need for a sensitive spectroscopic technique that can be used with atomically thin materials which are thinner than the Debye screening length as the current methods, such as deep level trap spectroscopy and admittance spectroscopy, are incompatible with the long emission times and temperature sensitivities of these materials. In this work we expand the threshold voltage transient phenomenon into an energy dispersive spectroscopic technique, dubbed the threshold voltage transient spectroscopy technique. This is applied to few-layer MoTe2 with the trap concentration and subsequently the density of trap states found in a region between the valence band edge and the midgap, which clearly shows the density of states in the tail end of the valence band.