345-MW/cm2 2608-V NO2 p-Type Doped Diamond MOSFETs With an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond

被引：46

作者：

Saha, Niloy Chandra ^{[1
]}

Kim, Seong-Woo ^{[2
]}

Oishi, Toshiyuki ^{[1
]}

Kawamata, Yuki ^{[2
]}

Koyama, Koji ^{[2
]}

Kasu, Makoto ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Adamant Namiki Precis Jewel Co Ltd, Tokyo 1238511, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 06期

基金：

日本学术振兴会;

关键词：

Al2O3 thick passivation; diamond MOSFET; heteroepitaxial diamond; high BFOM; NO2 p-type doping; FIELD-EFFECT TRANSISTOR; POLYCRYSTALLINE DIAMOND; BREAKDOWN VOLTAGE; MOBILITY; METAL; GHZ; FET;

D O I：

10.1109/LED.2021.3075687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond metal oxide semiconductor field effect transistors(MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond (R)) with NO2 p-type doping and an Al2O3 passivation overlayer exhibited a high off-state breakdown voltage of -2608 V. The 100-nm-thick Al2O3 passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74 m Omega center dot cm(2) and a maximum drain current density of -288 mA/mm, with an extremely low gate leakage current <10(-6) mA/mm. The Baliga's Figure-Of-Merits was experimentally determined to be 344.6 MW/cm(2), and the maximum DC power densitywas observed to be 21.0W/mm.

引用

页码：903 / 906

页数：4

共 26 条

[21] Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al2O3 Passivation Layer
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[22] Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties
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[23] Reduction of the Hysteresis Voltage in Atomic-Layer-Deposited p-Type SnO Thin-Film Transistors by Adopting an Al2O3 Interfacial Layer
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[24] Fabrication of Metal-Oxide-Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
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[25] The Significance of an In Situ ALD Al2O3 Stacked Structure for p-Type SnO TFT Performance and Monolithic All-ALD-Channel CMOS Inverter Applications
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[26] Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
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