345-MW/cm2 2608-V NO2 p-Type Doped Diamond MOSFETs With an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond

被引：46

作者：

Saha, Niloy Chandra ^{[1
]}

Kim, Seong-Woo ^{[2
]}

Oishi, Toshiyuki ^{[1
]}

Kawamata, Yuki ^{[2
]}

Koyama, Koji ^{[2
]}

Kasu, Makoto ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Adamant Namiki Precis Jewel Co Ltd, Tokyo 1238511, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 06期

基金：

日本学术振兴会;

关键词：

Al2O3 thick passivation; diamond MOSFET; heteroepitaxial diamond; high BFOM; NO2 p-type doping; FIELD-EFFECT TRANSISTOR; POLYCRYSTALLINE DIAMOND; BREAKDOWN VOLTAGE; MOBILITY; METAL; GHZ; FET;

D O I：

10.1109/LED.2021.3075687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond metal oxide semiconductor field effect transistors(MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond (R)) with NO2 p-type doping and an Al2O3 passivation overlayer exhibited a high off-state breakdown voltage of -2608 V. The 100-nm-thick Al2O3 passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74 m Omega center dot cm(2) and a maximum drain current density of -288 mA/mm, with an extremely low gate leakage current <10(-6) mA/mm. The Baliga's Figure-Of-Merits was experimentally determined to be 344.6 MW/cm(2), and the maximum DC power densitywas observed to be 21.0W/mm.

引用

页码：903 / 906

页数：4

共 26 条

[1] 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer
Saha, Niloy Chandra
Oishi, Toshiyuki
Kim, Seongwoo
Kawamata, Yuki
Koyama, Koji
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1066 - 1069
[2] 3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates
Saha, Niloy Chandra
Kim, Seong-Woo
Koyama, Koji
Oishi, Toshiyuki
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (01) : 112 - 115
[3] 875-MW/cm2 Low-Resistance NO2 p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs
Saha, Niloy Chandra
Kim, Seong-Woo
Oishi, Toshiyuki
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (05) : 777 - 780
[4] Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation
Saha, Niloy Chandra
Shiratsuchi, Tomoki
Eguchi, Masanori
Oishi, Toshiyuki
Kasu, Makoto
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2024, 42 (05):
[5] Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra
Shiratsuchi, Tomoki
Kim, Seong-Woo
Koyama, Koji
Oishi, Toshiyuki
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (06) : 975 - 978
[6] Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs
Saha, Niloy Chandra
Shiratsuchi, Tomoki
Oishi, Toshiyuki
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (10) : 1704 - 1707
[7] Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer
Kasu, Makoto
Saha, Niloy Chandra
Oishi, Toshiyuki
Kim, Seong-Woo
APPLIED PHYSICS EXPRESS, 2021, 14 (05)
[8] Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation
Hirama, Kazuyuki
Sato, Hisashi
Harada, Yuichi
Yamamoto, Hideki
Kasu, Makoto
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) : 1111 - 1113
[9] Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
Ren, Zeyang
Yuan, Guansheng
Zhang, Jinfeng
Xu, Lei
Zhang, Jincheng
Chen, Wanjiao
Hao, Yue
AIP ADVANCES, 2018, 8 (06):
[10] High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Pham, T. T.
Gutierrez, M.
Masante, C.
Rouger, N.
Eon, D.
Gheeraert, E.
Araujo, D.
Pernot, J.
APPLIED PHYSICS LETTERS, 2018, 112 (10)

← 1 2 3 →