Sharp interfacial structure of InAs/InP quantum dots grown by a double-cap method: A cross-sectional scanning tunneling microscopy study

被引：0

作者：

Akanuma, Y. ^{[1
]}

Yamakawa, I. ^{[1
]}

Sakuma, Y. ^{[2
]}

Usuki, T. ^{[3
]}

Nakamura, A. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Univ Tsukuba, Natl Inst Materials Sci, Tsukuba, Ibaraki 305, Japan

[3] Fujitsu Lab Ltd, Atsugi, Kanagawa 2430034, Japan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

quantum dots; interfacial structure; scanning tunneling microscopy; III-V compounds semiconductor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interfacial properties of InAs quantum dots (QDs) grown by a double-cap method in metalorganic chemical vapor deposition have been investigated by cross-sectional scanning tunneling microscopy (XSTM). XSTM images reveal that top and bottom interfaces of the InAs QD are extremely sharp. QDs with a monolayer-stepped height in the range 6-14 ML are observed, which indicates that the double-cap method can produce QDs with a well-defined height.

引用

页码：107 / +

页数：2

共 8 条

[1] Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy [J].

Gong, Q ;

Offermans, P ;

Nötzel, R ;

Koenraad, PM ;

Wolter, JH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5697-5699

[2] Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm [J].

Paranthoen, C ;

Bertru, N ;

Dehaese, O ;

Le Corre, A ;

Loualiche, S ;

Lambert, B ;

Patriarche, G .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1751-1753

[3] Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD [J].

Sakuma, Y ;

Takemoto, K ;

Hirose, S ;

Usuki, T ;

Yokoyama, N .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) :81-85

[4] Indistinguishable photons from a single-photon device [J].

Santori, C ;

Fattal, D ;

Vuckovic, J ;

Solomon, GS ;

Yamamoto, Y .

NATURE, 2002, 419 (6907) :594-597

[5] Non-classical photon emission from a single InAs/InP quantum dot in the 1.3-μm optical-fiber band [J].

Takemoto, K ;

Sakuma, Y ;

Hirose, S ;

Usuki, T ;

Yokoyama, N ;

Miyazawa, T ;

Takatsu, M ;

Arakawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7B) :L993-L995

[6] Composition profile of ZnSe/BeTe multiple quantum well structures studied by cross-sectional scanning tunneling microscopy [J].

Yamakawa, I ;

Akanuma, Y ;

Li, BS ;

Akimoto, R ;

Nakamura, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1337-L1340

[7] Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells [J].

Yamakawa, I ;

Oga, R ;

Fujiwara, Y ;

Takeda, Y ;

Nakamura, A .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4436-4438

[8] Electrically driven single-photon source [J].

Yuan, ZL ;

Kardynal, BE ;

Stevenson, RM ;

Shields, AJ ;

Lobo, CJ ;

Cooper, K ;

Beattie, NS ;

Ritchie, DA ;

Pepper, M .

SCIENCE, 2002, 295 (5552) :102-105

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