InAs quantum dot superluminescent diodes with trench structure

被引：6

作者：

Yoo, Young Chae ^{[1
]}

Kim, Lee-Hyun ^{[2
]}

Han, Il Ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea

[2] Hankuk Acad Foreign Studies, Yongin 449791, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 05期

关键词：

ACTIVE-REGION; 1.3-MU-M;

D O I：

10.1007/s10854-009-9936-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a trench structure, we have realized improved reliability for processing InAs quantum-dot-based J-shaped superluminescent diodes (SLDs) with shallow-etched waveguides. The observed drastic decrease of output power in shallow-etched-waveguide SLDs is recovered with the deep-etched waveguide. The output power increases with decreasing separation between the waveguide and the trench. The maximum output power of the SLDs with the trench structure exceeds 25 mW. The trench structure should help to achieve low production costs while retaining high reliability.

引用

页码：445 / 449

页数：5

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