Effect of process conditions on microstructural development during thermal evaporation of AlSb thin films

被引：25

作者：

Lal, K ^{[1
]}

Srivastava, AK ^{[1
]}

Singh, S ^{[1
]}

Kishore, R ^{[1
]}

机构：

[1] Natl Phys Lab, Div Mat Characterizat, Electron Microscope Sect, New Delhi 110012, India

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2003年 / 22卷 / 07期

关键词：

D O I：

10.1023/A:1022934302798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The preparation of bulk AlSb compound with maintained stoichiometry was attempted using a vertical directional solidification apparatus. The bulk material was utilized to synthesize the thin film on different substrate material and deposition temperatures using the method of thermal evaporation. Under different process conditions, a good quality thin film with a single phase of fcc structure and having semiconducting behavior was successfully grown on a NaCl substrate at 573 K. Microstructural features originated under these suitable conditions lead to random distribution of fine grain with polycrystalline nature.

引用

页码：515 / 518

页数：4

共 12 条

[1] The growth of mid-infrared lasers and AlAsxSb1-x by MOCVD [J].

Biefeld, RM ;

Allerman, AA ;

Kurtz, SR .

JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :593-598

[2] ETUDE DE LA PREPARATION ET DES PROPRIETES ELECTRIQUES DE COUCHES MINCES SEMICONDUCTRICES DANTIMONIURE DALUMINIUM [J].

DAVID, JP ;

CAPELLA, L ;

LAUDE, L ;

MARTINUZZI, S .

REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (03) :172-+

[3] Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes [J].

Glaser, ER ;

Kennedy, TA ;

Bennett, BR ;

Shanabrook, BV ;

Hemstreet, LA ;

Bayerl, MW ;

Brandt, MS .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :811-814

[4] ALUMINUM ANTIMONIDE THIN FILMS BY COEVAPORATION OF ELEMENTS [J].

JOHNSON, JE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3193-&

[5]

LAL K, 1998, IND S FRONT EL MICR

[6]

LAL K, 2001, P INT WORKSH PREP CH, P488

[7] GROWTH OF ALSB ON INSULATING SUBSTRATES BY METAL ORGANICS CHEMICAL VAPOR-DEPOSITION [J].

LEROUX, M ;

TROMSONCARLI, A ;

GIBART, P ;

VERIE, C ;

BERNARD, C ;

SCHOULER, MC .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (03) :367-378

[8]

MATSUO KH, 1986, PHYS STATUS SOLIDI B, V134

[9]

PATEL SM, 1983, INDIAN J PURE AP PHY, V21, P418

[10] OPTICAL INVESTIGATIONS OF A GASB-ALSB SINGLE QUANTUM-WELL [J].

RAISIN, C ;

LASSABATERE, L ;

ALLIBERT, C ;

GIRAULT, B ;

ABDELFATTAH, G ;

VOISIN, P .

SOLID STATE COMMUNICATIONS, 1987, 61 (01) :17-19

← 1 2 →