A Single-Material Logical Junction Based on 2D Crystal PdS2

被引：95

作者：

Ghorbani-Asl, Mahdi ^{[1
,2
]}

Kuc, Agnieszka ^{[1
,3
]}

Miro, Pere ^{[1
,4
]}

Heine, Thomas ^{[1
,3
]}

机构：

[1] Jacobs Univ Bremen, Dept Phys & Earth Sci, Campus Ring 1, D-28759 Bremen, Germany

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[3] Univ Leipzig, Wilhelm Ostwald Inst Phys & Theoret Chem, Linnestr 2, D-04103 Leipzig, Germany

[4] Northwestern Univ, Dept Chem & Biol Engn, 2145 Sheridan Rd, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 05期

关键词：

density-functional theory; PdS2; single-material transistors; tunnel diodes; ELECTRONIC-PROPERTIES; TRANSITION;

D O I：

10.1002/adma.201504274

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS2. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor. Copyright © 2015 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：853 / 856

页数：4

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