40.6 Watt, High Power 3.55 GHz Single Crystal XBAW RF Filters for 5G Infrastructure Applications

被引：0

作者：

Shen, Ya ^{[1
]}

Zhang, Runqi ^{[1
]}

Vetury, Ramakrishna ^{[1
]}

Shealy, Jeffrey ^{[1
]}

机构：

[1] Akoustis Inc, Huntersville, NC 28078 USA

来源：

PROCEEDINGS OF THE 2020 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2020年

关键词：

BAW filters; acoustic filters; single crystal AlN thin film; poly crystal AlN thin film; mobile communication; LTE; 5G; power handling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous 4G/LTE applications for RF BAW filters were predominately focused on relatively low power, sub-3 GHz filters for wireless applications. Emerging 5G infrastructure applications bring new requirements for high-power, high-frequency micro RF filters to address coexistence challenges in newly license bands (n77, n78, n79) in the 3.3 to 5 GHz spectrum. This work focuses on the power robustness of 3.5-3.6 GHz XBAW band-pass RF filters constructed using single crystal and poly crystal piezoelectric ("piezo") layers. Superior power handling as well as small-signal performance has been demonstrated.

引用

页数：3

共 7 条

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