Integration of organic thin-film transistor and polymer light-emitting diodes

被引：9
作者：
Zou Jian-Hua [1 ]
Lan Lin-Feng [1 ]
Xu Rui-Xia [1 ]
Yang Wei [1 ,2 ]
Peng Jun-Biao [1 ,2 ]
机构：
[1] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
[2] S China Univ Technol, Minist Educ, Key Lab Specially Funct Mat & Adv Mfg Technol, Guangzhou 510640, Guangdong, Peoples R China
来源：
ACTA PHYSICA SINICA | 2010年 / 59卷 / 02期
基金：
中国国家自然科学基金;
关键词：
organic thin-film transistor; polymer light-emitting diode; screen printing; integration; PENTACENE; DEVICES; PERFORMANCE;
D O I：
10.7498/aps.59.1275
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated the technology and the related physical problems for integrating organic thin-film transistor (OTFT) and polymer light-emitting diode (PLED). The OUT uses Pentacene as the active medium, Ta2O5 as dielectric layer, Ta as gate electrode and An as source/drain electrodes. The structure of PLED device is ITO/PEDOT:PEO ( polyethylene oxide)/P-PPV or MEH-PPV/Ba/Al. The PEDOT:PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of -7.1 V and carrier mobility of 0.91 cm(2)/(V.s). The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/m(2) and the maximal luminous efficiency are 12.4 and 1.1 cd/A, respectively.
引用
收藏
页码：1275 / 1281
页数：7
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