Modeling and characterization of 80V LDMOSFET for RF communications

被引：3

作者：

Perugupalli, P ^{[1
]}

Trivedi, M ^{[1
]}

Shenai, K ^{[1
]}

Leong, SK ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect Engn & Comp Sci, Syst Silicon Res Ctr, Chicago, IL 60680 USA

来源：

PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1997年

关键词：

D O I：

10.1109/BIPOL.1997.647364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and optimization of a 80V LDMOSFET used in RF power amplifiers for cellular base station applications. SRP data from experimantal device was used prototype the device using advanced 2-D process and device simulators. DC and RF characterization has been performed for the device. A proper match has been obtained between the measured and simulated data. A simple circuit model has been developed in which each of the components has been associated with the physical principles of device operation. A close match between the measured and modeled RF data has been reported.

引用

页码：92 / 95

页数：4