Morphology control for growth of thick epitaxial 4H SiC layers

被引：8

作者：

Zhang, J ^{[1
]}

Ellison, A ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

chimney CVD; morphology; SiC epitaxy; step bunching; surface roughness;

D O I：

10.4028/www.scientific.net/MSF.338-342.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of morphology control is conducted on 4H SiC Si- and C-face epilayers grown in a chimney CVD reactor. The macroscopic step-bunching and the defect evolution processes with increasing epilayer thickness are investigated in order to achieve smooth surface morphology for thick epilayers of 30 - 120 mum. The growth temperature and input precursor concentrations are observed to have strong impact on the surface morphology.

引用

页码：137 / 140

页数：4

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