Subthreshold current in silicon carbide buried-gate junction field-effect transistor

A theory of subthreshold conduction in buried-gate junction field-effect transistor has been developed which is based on the assumption that the subthreshold current is governed by carrier diffusion in the channel. An analytical expression has been obtained for the dependence of the drain current in subthreshold operation upon gate and drain voltages. The expression is found to correlate well with experimental results taken on n-channel 6H-SiC JFET.