Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

被引：33

作者：

Chen, Chun-Chia ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Liu, I-Ping ^{[2
]}

Liu, Hao-Yeh ^{[1
]}

Chou, Po-Cheng ^{[1
]}

Liou, Jian-Kai ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2015年 / 211卷

关键词：

H2O2 surface treatment; GaOx; Hydrogen sensor; Schottky diode; SENSORS;

D O I：

10.1016/j.snb.2015.01.099

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor witha GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 x 10(5) and a large Schottky barrier height variation ratio of 33.1% are found upon exposure to a 1% H-2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H-2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1% H-2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：303 / 309

页数：7

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