Fast randombit generation with a single chaotic laser subjected to optical feedback

被引：5

作者：

Li, Nianqiang ^{[1
]}

Kim, Byungchil ^{[2
,4
]}

Choi, Daeyoung ^{[2
,4
]}

Chizhevsky, V. N. ^{[3
]}

Locquet, A. ^{[2
,4
]}

Bloch, M. ^{[2
,4
]}

Citrin, D. S. ^{[2
,4
]}

Pan, Wei ^{[1
]}

机构：

[1] Southwest Jiaotong Univ, Ctr Informat Photon, Chengdu 610031, Peoples R China

[2] Georgia Tech Lorraine, Georgia Tech CNRS, UMI 2958, F-57070 Metz, France

[3] Natl Acad Sci Belarus, B I Stepanov Inst Phys, Minsk 220072, BELARUS

[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

SEMICONDUCTOR LASERS AND LASER DYNAMICS VI | 2014年 / 9134卷

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

Random bit generation; optical chaos; semiconductor lasers; min-entropy; RANDOM BIT GENERATION; INJECTED SEMICONDUCTOR-LASER;

D O I：

10.1117/12.2052422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random bit generation (RBG) with chaotic semiconductor lasers has been extensively studied because of its potential applications in secure communications and high-speed numerical simulations. Researchers in this field have mainly focused on the improvement of the generation rate and the compactness of the random bit generators. In this paper, we experimentally demonstrate the existence of two regimes of fast RBG using a single chaotic laser subjected to delayed optical feedback: the first one is based on the extraction of all min-entropy contained in each random sample, and the second one is to demonstrate a possibility of increasing the generation rate by extracting 55 bits fromeach variable.

引用

页数：6

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