Pressure shift of the zone-center TO mode of Zn

被引:49
作者
Olijnyk, H [1 ]
Jephcoat, AP
Novikov, DL
Christensen, NE
机构
[1] Univ Oxford, Dept Earth Sci, Oxford OX1 3PR, England
[2] Arthur D Little Inc, Cambridge, MA 02140 USA
[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
关键词
D O I
10.1103/PhysRevB.62.5508
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The pressure dependence of the transverse-optical zone-center phonon mode of Zn was measured by means of Raman spectroscopy up to 58 GPa at room temperature. The frequency increases under pressure and no anomaly is observed in the pressure range around 10 GPa where electronic topological transitions are expected to occur, and where also ab initio "frozen phonon" calculations predict a weak anomaly in the cia ratio. The relatively large value of the mode Gruneisen parameter gamma(i) = -d ln nu(i)/d ln V and its strong decrease under pressure are related to the high compressional anisotropy at ambient pressure and the gradual anisotropic --> isotropic transition occurring with increasing pressure in Zn, respectively. An irregularity is observed in the pressure dependence of the line width around 10 GPa which may be related to changes in the phonon-phonon and electron-phonon interactions that could be a consequence of the electronic topological transitions.
引用
收藏
页码:5508 / 5512
页数:5
相关论文
共 41 条
[1]   THE ELASTIC CONSTANTS OF ZINC BETWEEN 4.2-DEGREES-K AND 670-DEGREES-K [J].
ALERS, GA ;
NEIGHBOURS, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (01) :58-64
[2]   PHONONS IN ZINC AT 80 K [J].
ALMQVIST, L ;
STEDMAN, R .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1971, 1 (06) :785-&
[3]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[4]  
Ashcroft N.W., 1976, SOLID STATE PHYS, P482
[5]  
Baptizmanskii V. V., 1979, Soviet Physics - Solid State, V21, P1488
[6]   A STUDY OF CRYSTAL DYNAMICS OF ZINC [J].
BORGONOVI, G ;
ANTAL, JJ ;
CAGLIOTI, G .
PHYSICAL REVIEW, 1963, 132 (02) :683-&
[7]   Electronic structure calculations for semiconductors under pressure [J].
Christensen, NE .
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I, 1998, 54 :49-144
[8]   Anomaly in cia ratio of Zn under pressure [J].
Fast, L ;
Ahuja, R ;
Nordstrom, L ;
Wills, JM ;
Johansson, B ;
Eriksson, O .
PHYSICAL REVIEW LETTERS, 1997, 79 (12) :2301-2303
[9]   RAMAN SCATTERING BY OPTICAL MODES OF METALS [J].
FELDMAN, DW ;
PARKER, JH ;
ASHKIN, M .
PHYSICAL REVIEW LETTERS, 1968, 21 (09) :607-&
[10]   PRESSURE MEASUREMENT MADE BY UTILIZATION OF RUBY SHARP-LINE LUMINESCENCE [J].
FORMAN, RA ;
BLOCK, S ;
BARNETT, JD ;
PIERMARINI, GJ .
SCIENCE, 1972, 176 (4032) :284-+