N1s electron binding energies of CNx thin films grown by magnetron sputtering at different temperature

被引:0
|
作者
Zheng, WT [1 ]
Xing, KZ [1 ]
Hellgren, N [1 ]
Ivanov, I [1 ]
Salaneck, WS [1 ]
Sundgren, JE [1 ]
机构
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds.
引用
收藏
页码:25 / 28
页数:4
相关论文
共 50 条
  • [41] HETEROCYCLES .13. N1S ORBITAL BINDING-ENERGIES OF SOME QUINAZOLINES AND PYRIMIDINES BY XPS
    ELRAYYES, NR
    KATRIB, A
    ALKHARAFI, FM
    ELISSA, BD
    JOURNAL OF HETEROCYCLIC CHEMISTRY, 1987, 24 (05) : 1417 - 1419
  • [42] Residual stress and Curie temperature of Fe-N thin films prepared by dc magnetron sputtering at elevated temperature
    Li, W. L.
    Sun, Y.
    Fei, W. D.
    APPLIED SURFACE SCIENCE, 2006, 252 (14) : 4995 - 5001
  • [43] Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering
    Isik, M.
    Gullu, H. H.
    Terlemezoglu, M.
    Surucu, O. Bayrakli
    Parlak, M.
    Gasanly, N. M.
    PHYSICA B-CONDENSED MATTER, 2020, 591
  • [44] Dielectric properties of ambient temperature grown nanocrystalline ZrTiO4 thin films using DC magnetron sputtering
    Pamu, D.
    Sudheendran, K.
    Krishna, M. Ghanashyam
    Raju, K. C. James
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 168 (1-3): : 208 - 213
  • [45] Room-temperature stimulated emission from ZnO thin films grown by radio-frequency magnetron sputtering
    Yao, Z. G.
    Zhang, X. Q.
    Suemune, Ikuo.
    Huang, S. H.
    JOURNAL OF LUMINESCENCE, 2007, 122 : 825 - 827
  • [46] ON THE PROPERTIES OF A1N THIN-FILMS GROWN BY LOW-TEMPERATURE REACTIVE RF-SPUTTERING
    LI, XJ
    XU, ZH
    HE, ZY
    CAO, HZ
    SU, WD
    CHEN, ZC
    ZHOU, F
    WANG, EU
    THIN SOLID FILMS, 1986, 139 (03) : 261 - 274
  • [47] Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature
    Ramos, Raul
    Franco de Godoy, Marcio Peron
    Rangel, Elidiane Cipriano
    da Cruz, Nilson Cristino
    Durrant, Steven F.
    Ribeiro Bortoleto, Jose Roberto
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2020, 23 (03):
  • [48] Microstructure, mechanical properties, and wetting behavior of Si-C-N thin films grown by reactive magnetron sputtering
    Berlind, T
    Hellgren, N
    Johansson, MP
    Hultman, L
    SURFACE & COATINGS TECHNOLOGY, 2001, 141 (2-3): : 145 - 155
  • [49] Structural and Morphological Studies on Bi1-XCaXMnO3 Thin Films Grown by RF Magnetron Sputtering
    Pugazhvadivu, K. S.
    Santhiya, M.
    Balakrishnan, L.
    Tamilarasan, K.
    DAE SOLID STATE PHYSICS SYMPOSIUM 2015, 2016, 1731
  • [50] Room Temperature Deposition and Properties of AZO Thin Films by DC Magnetron Sputtering under Different Plasma Power
    Chi, Jingrong
    Fan, Ping
    Liang, Guangxing
    Zhang, Dongping
    Cai, Xingmin
    Zheng, Zhuanghao
    Chen, Tianbao
    ADVANCED ENGINEERING MATERIALS, PTS 1-3, 2011, 194-196 : 2440 - 2443