N1s electron binding energies of CNx thin films grown by magnetron sputtering at different temperature

被引：0

作者：

Zheng, WT ^{[1
]}

Xing, KZ ^{[1
]}

Hellgren, N ^{[1
]}

Ivanov, I ^{[1
]}

Salaneck, WS ^{[1
]}

Sundgren, JE ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 1998年 / 14卷 / 01期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds.

引用

页码：25 / 28

页数：4

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