N1s electron binding energies of CNx thin films grown by magnetron sputtering at different temperature

被引：0
|
作者：
Zheng, WT [1 ]
Xing, KZ [1 ]
Hellgren, N [1 ]
Ivanov, I [1 ]
Salaneck, WS [1 ]
Sundgren, JE [1 ]
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 1998年 / 14卷 / 01期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds.
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页码：25 / 28
页数：4
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