C-H Direct Arylated 6H-Indolo[2,3-b]quinoxaline Derivative as a Thickness-Dependent Hole-Injection Layer

被引：28

作者：

Dong, Dai ^{[1
,2
]}

Fang, Da ^{[3
,4
]}

Li, Hairong ^{[1
,2
]}

Zhu, Caixia ^{[1
,2
]}

Zhao, Xianghua ^{[5
]}

Li, Jiewei ^{[1
,2
]}

Jin, Lingzhi ^{[3
,4
]}

Xie, Linghai ^{[3
,4
]}

Chen, Lin ^{[6
]}

Zhao, Jianfeng ^{[1
,2
,3
,4
]}

Zhang, Hongmei ^{[3
,4
]}

Huang, Wei ^{[1
,2
,3
,4
]}

机构：

[1] Nanjing Tech Univ NanjingTech, Key Lab Flexible Elect KLOFE, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

[2] Nanjing Tech Univ NanjingTech, IAM, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

[3] Nanjing Univ Posts & Telecommun, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Organ Elect & Informat Displays, Nanjing 210023, Jiangsu, Peoples R China

[4] Nanjing Univ Posts & Telecommun, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, Nanjing 210023, Jiangsu, Peoples R China

[5] Xinyang Normal Univ, Coll Chem & Chem Engn, Xinyang 464000, Henan, Peoples R China

[6] Nanjing Polytech Inst, Nanjing 210048, Jiangsu, Peoples R China

来源：

CHEMISTRY-AN ASIAN JOURNAL | 2017年 / 12卷 / 08期

基金：

中国国家自然科学基金;

关键词：

arylation; heterocycles; hole injection; light-emitting diodes; luminescence; LIGHT-EMITTING-DIODES; ORGANIC ELECTROLUMINESCENT DEVICES; EXTERNAL QUANTUM EFFICIENCY; HOST MATERIALS; PHYSICAL-PROPERTIES; EMISSION-MECHANISM; CARRIER INJECTION; STABILITY; INDOLOQUINOXALINE; AZAACENES;

D O I：

10.1002/asia.201700112

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel perfluoro-1,4-phenylenyl 6H-indolo[2,3-b]quinoxaline derivative (TFBIQ) was designed and synthesized by using a C-H direct arylation method. The optoelectrical properties of the obtained TFBIQ were fully characterized by UV/Vis spectroscopy, photoluminescence spectroscopy, cyclic voltammetry, and a group of Alq(3)-based green organic light-emitting diodes (OLEDs). DeviceA, which used 0.5nm-thick TFBIQ as the interfacial modification layer, exhibited the five best advantages of device performance including a minimum turn-on voltage as low as 3.1V, a maximum luminescence intensity as high as 26564cdm(-2), a highest current density value of 348.9mAcm(-2) at a voltage of 11V, the smallest efficiency roll-off, as well as the greatest power efficiency of 1.46lmW(-1) relative to all of the other tested devices with thicker TFBIQ and also 10nm-thick MoO3 as hole-injection layers (HILs). As a promising candidate for an organic HIL material, the as-prepared TFBIQ exhibited a strong thickness effect on the performance of corresponding OLEDs. Furthermore, the theoretical calculated vertical ionization potential of the fluorinated TFBIQ suggests better anti-oxidation stability than that of the non-fluorinated structure.

引用

页码：920 / 926

页数：7

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