Solution space for the independent-gate asymmetric DGFET

被引：12

作者：

Dessai, Gajanan ^{[1
]}

Gildenblat, Gennady ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 04期

关键词：

Double-gate MOSFET; Independent-gate asymmetric DGFET; LAMBERT W-FUNCTION; MOSFETS; CHARGE; MODEL;

D O I：

10.1016/j.sse.2009.12.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an alternative and computationally efficient description of the boundary between the trigonometric and hyperbolic solutions of the Poisson-Boltzmann equation for the independent-gate asymmetric DGFET. In particular, we demonstrate that this boundary consists of two curves and provide the explicit expression for both of them in terms of the Lambert W function. Published by Elsevier Ltd.

引用

页码：382 / 384

页数：3

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