Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

被引：1

作者：

Chen, YH

Yang, Z

Bo, XU

Wang, ZG

Liang, JB

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong

[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 1997年 / 14卷 / 12期

关键词：

D O I：

10.1088/0256-307X/14/12/014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

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收藏

页码：932 / 935

页数：4

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